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Recent Publications (1995 - Present):

219. A. BenMoussa, A. Soltani, U. Sch邦hle, K. Haenen, Y.M. Chong, W.J. Zhang, R. Dahal, J.Y. Lin, H.X. Jiang, H.A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J.C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J.F. Hochedez, ※Recent developments of wide-bandgap semiconductor based UV sensors§, Diamond & Related Materials (in Press).

218. M. L. Nakarmi, N. Nepal, J. Y. Lin, and H. X. Jiang, ※Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys§,  Appl. Phys. Lett. 94, 091903 (2009).  Adobe

217. R. Dahal, B. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, ※ InGaN/GaN multiple quantum well solar cells with long operating wavelengths§, Appl. Phys. Lett. 94, 063505 (2009). Adobe

216. B. N. Pantha, R. Dahal, J. Li, J. Y. Lin, H. X. Jiang and G. Pomrenke, ※Thermoelectric Properties of In0.3Ga0.7N Alloys§,  JEM  (0nline)

215. B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, ※Single phase InxGa1−xN (0.25<=x<=0.63) alloys synthesized by metal organic chemical vapor deposition§, Appl. Phys. Lett. 93, 182107
(2008). Adobe

214. J. Li, J. Y. Lin, and H. X. Jiang, ※Direct hydrogen gas generation by using InGaN epilayers as working electrodes§, Appl. Phys. Lett. 93, 162107 (2008). Adobe

213. J. Liu, J. Li, A. Sedhain, J. Y. Lin, and H. X. Jiang, ※Structure and Photoluminescence Study of TiO2 Nanoneedle Texture along Vertically Aligned Carbon Nanofiber Arrays§, J. Phys. Chem. C, 112, 17127 (2008). 

212. A. Sedhain, T. M. Al Tahtamouni, J. Li, J. Y. Lin, and H. X. Jiang, ※Beryllium acceptor binding energy in AlN§, Appl. Phys. Lett. 93, 141104 (2008).  Adobe

211. A. Sedhain, N. Nepal, M. L. Nakarmi, T. M. Al tahtamouni, J. Y. Lin, H. X. Jiang, Z. Gu, and J. H. Edgar, ※Photoluminescence properties of AlN homoepilayers with different orientations, Appl. Phys. Lett. 93, 041905 (2008). Adobe

210. R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, ※Current-injected 1.54 µm light emitting diodes based on erbium-doped GaN§, Appl. Phys. Lett. 93, 033502 (2008). Adobe

209. N. Khan, A. Sedhain, J. Li, J. Y. Lin, and H. X. Jiang, ※High mobility InN epilayers grown on AlN epilayer templates§, Appl. Phys. Lett. 92, 172101 (2008).Adobe

208. T. Al Tahtamouni, A. Sedhain, J. Y. Lin, H. X. Jiang, ※Growth and optical properties of a-plane AlN and Al rich AlN/AlxGa1-xN quantum wells grown on r-plane sapphire substrates§, phys. stat. sol. (c), 1每 3 (2008).Adobe

207. R. Dahal, J. Li, Z. Y. Fan, M. L. Nakarmi, T. M. Al Tahtamouni, J. Y. Lin, H. X. Jiang, ※AlN MSM and Schottky photodetectors§, phys. stat. sol. (c), 1每 4 (2008).Adobe

206. T. M. Al tahtamouni, A. Sedhain, J. Y. Lin, and H. X. Jiang, ※Si-doped high Al-content AlGaN epilayers with improved quality and conductivity using indium as a surfactant§, Appl. Phys. Lett. 92, 092105 (2008).Adobe

205. A. Sedhain, J. Y. Lin, and H. X. Jiang , ※Valence band structure of AlN probed by photoluminescence§, Appl. Phys. Lett. 92, 041114 (2008). Adobe

204. B. N. Pantha, R. Dahal, J. Li, J. Y. Lin, H. X. Jiang, and G. Pomrenke, ＆＊Thermoelectric properties of InxGa1−xN alloys＊＊, Appl. Phys. Lett. 92, 042112 (2008). Adobe

203. A. BenMoussa, J. F. Hochedez, R. Dahal, J. Li, J. Y. Lin, H. X. Jiang, A. Soltani, J.-C. De Jaeger, U. Kroth, and M. Richter, ※Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44每360  nm: Photoemission assessments§, Appl. Phys. Lett. 92, 022108 (2008). Adobe

202. K. Makarova, M. Stachowicz, V. Glukhanyuk, A. Kozanecki, C. Ugolini, J.Y. Lin, H.X. Jiang , J. Zavada, ※Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er§, Materials Science and Engineering B 146, 193 (2008).

201. R. Dahal, T. M. Al Tahtamouni, J. Y. Lin, and H. X. Jiang, ※AlN avalanche photodetectors§, Appl. Phys. Lett. 91, 243503 (2007). Adobe

200. B. N. Pantha, N. Nepal, T. M. Al Tahtamouni, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, ※Correlation between biaxial stress and free exciton transition in AlN epilayers§,  Appl. Phys. Lett. 91, 121117 (2007).  Adobe
199. Fei Wang, Shu-Shen Li, Jian-Bai Xia,  H. X. Jiang,  J. Y. Lin, Jingbo Li and Su-Huai Wei, ※Effects of the wave function localization in AlInGaN quaternary alloys§, Appl. Phys. Lett. 91, 061125 (2007). Adobe

198. J. M. Zavada,  N. Nepal, C. Ugolini, J. Y. Lin,  H. X. Jiang, R. Davies, J. Hite, C. R. Abernathy, S. J. Pearton, E. E. Brown and U. Hömmerich, ※Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition§, Appl. Phys. Lett. 91, 054106 (2007). Adobe

197. N. Khan, N. Nepal, A. Sedhain, J. Y. Lin, and H. X. Jiang, ※Mg acceptor level in InN epilayers probed by photoluminescence§, Appl. Phys. Lett. 91, 012101 (2007). Adobe

196. R. Dahal, T. M. Al Tahtamouni, Z. Y. Fan, J. Y. Lin, and H. X. Jiang, ※Hybrid AlN每SiC deep ultraviolet Schottky barrier photodetectors§, Appl. Phys. Lett. 90, 263505 (2007).Adobe

195.B. N. Pantha, R. Dahal, M. L. Nakarmi, N. Nepal, J. Li, J. Y. Lin, H. X. Jiang, Q. S. Paduano, and David Weyburne,  ※Correlation between optoelectronic and structural properties and epilayer thickness of AlN§, Appl. Phys. Lett. 90, 241101 (2007). Adobe

194. T. M. Al Tahtamouni, A. Sedhain, J. Y. Lin, and H. X. Jiang,  ※Growth and photoluminescence studies of a-plane AlN/AlxGa1−xN quantum wells§, Appl. Phys. Lett. 90, 221105 (2007). Adobe

193. X. H. Ji, S. P. Lau, S. F. Yu, H. Y. Yang, T. S. Herng, A. Sedhain, J. Y. Lin, H. X. Jiang, K. S. Teng, and J. S. Chen, "Ultraviolet photoluminescence from ferromagnetic Fe-doped AlN nanorods," Appl. Phys. Lett. 90, 193118 (2007). Adobe

 192. Z. Y. Fan, J. Y. Lin, and H. X. Jiang, ※Achieving conductive high Al-content AlGaN alloys for deep UV photonics,§ Proc. SPIE 6479, 64791I (2007).

191. C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, ※Excitation dynamics of the 1.54 µm emission in Er doped GaN synthesized by metal organic chemical vapor deposition,§Appl. Phys. Lett.90,051110(2007).Adobe 

190.J. Li, Z. Y. Fan, R. Dahal, M. L Nakarmi, J. Y. Lin, and H. X. Jiang, ※200  nm deep ultraviolet photodetectors based on AlN,§   Appl. Phys. Lett. 89, 213510 (2006). Adobe

189. N. Nepal, M. L. Nakarmi, H. U. Jang, J. Y. Lin, and H. X. Jiang, "Growth and photoluminescence studies of Zn-doped AlN epilayers,"Appl. Phys. Lett. 89, 192111 (2006). Adobe

188. M. L. Nakarmi, N. Nepal,C. Ugolini,T. M. Al Tahtamouni, J. Y. Lin,and  H. X. Jiang,"Correlation between optical and electrical properties of Mg-doped AlN epilayers," Appl. Phys. Lett. 89, 152120 (2006). Adobe

187. N. Khan and J. Li, ※Effects of compressive strain on optical properties of InxGa1每xN/GaN quantum wells§, Appl. Phys. Lett. 89, 151916 (2006). Adobe

186. Z. M. Zavada, N.Nepal, J. Y. Lin, H. X. Jiang,E. Brown, U. Hommerich, J. Hite, G. T. Thaler, C. R. Abernathy, S. J. Pearton,and R. Gwilliam, "Ultraviolet photoluminescence from Gd-implanted AlN epilayers," Appl. Phys. Lett. 89, 152107 (2006). Adobe

185. C. Ugolini,N.Nepal,J. Y. Lin, H. X. Jiang,and J. M. Zavada "Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition," Appl. Phys. Lett. 89, 151903 (2006). Adobe

184. T. M. Al Tahtamouni, N.Nepal,J. Y. Lin, H. X. Jiang and W. W. Chow, "Growth and photoluminescence studies of Al-rich AlN/AlxGa1每xN quantum wells," Appl. Phys. Lett. 89, 131922 (2006). Adobe

183. N. Nepal,M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Photoluminescence studies of impurity transitions in AlGaN alloys," Appl. Phys. Lett. 89, 092107 (2006). Adobe

182. N. Nepal, K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Higher lying conduction band in GaN and AlN probed by photoluminescence spectroscopy," Appl. Phys. Lett. 88, 261919 (2006).Adobe 

181. J. K. Kim, E. F. Schubert, J. Cho, C. Sone, J. Y. Lin, H. X. Jiang, and J. M. Zavada, "GaN light-emitting triodes for high-efficiency hole injection," J. Electrochem. Soc. 153, G734 (2006). Adobe

180. T. N. Oder, P. Martin, J. Y. Lin, H. X. Jiang, J. R. Williams, and T. Isaacs-Smith, "Thermally stable Schottky contacts on n-type GaN using ZrB2," Appl. Phys. Lett. 88, 183505 (2006).Adobe

179. J. Li, J. Y. Lin, and H. X. Jiang,"Growth of III-nitride photonic structures on large area silicon substrates," Appl. Phys. Lett. 88, 171909 (2006).Adobe

178. N. Nepal, J. Shakya, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang,"Deep ultraviolet photoluminescence studies of AlN photonic crystals," Appl. Phys. Lett. 88, 133113 (2006). Adobe

177. N. Nepal, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Time-resolved photoluminescence studies of Mg-doped AlN epilayers," Proc. SPIE, 6118, 61180E (2006). 

176. Z. Y. Fan, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "AlGaN/GaN/AlN quantum-well field-effect transistors with highly resistive AlN epilayers," Appl. Phys. Lett. 88, 073513 (2006). Adobe

175. N. Nepal, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang,"Exciton localization in AlGaN alloys," Appl. Phys. Lett. 88, 062103 (2006).Adobe

174. A. N. Westmeyer, S. mahajan, K. K. Bajaj, J. Y. Lin, H. X. Jiang, D. D. Koleske, and R. T. Senger, "Determination of energy-band offsets between GaN and AlN using excitonic luminescence transition in AlGaN alloys," J. Appl. Phys. 99, 013705 (2006). Adobe

173. G.D. Chen, Y. Z. Zhu, G. J. Yan, J. S.Yuan, K. H. Kim, J. Y. Lin, and H. X. Jiang, ※Time-resolved photoluminescence studies of indium-rich InGaN alloys,§ CHINESE PHYSICS LETTERS 22, 472 (2005).

172. Hallbeck S, Caruso AN, Adenwalla S, Brand J, Byun DJ, Jiang HX, Lin JY, Losovyj YB, Lundstedt C, McIlroy DN, Pitts WK, Robertson BW, Dowben PA, ※Comment on "Spectral identification of thin film coated and solid form semiconductor neutron detectors" by McGregor and Shultis,§ Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment, 536, 228 (2005).
 
171. N. Nepal, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, ※Temperature and Compositional Dependence of the Energy Bandgap of AlGaN Alloys,§ Appl. Phys. Lett. 87, 242104 (2005). Adobe

170. N. Nepal, K. B. Nam, J. Li, J. Y. Lin, and H. X. Jiang, "Carrier dynamics in AlN and GaN epilayers at the elevated temperatures,"Proc. SPIE, 5725, 119 (2005).

169. R. Hui, Y. Wan, J. Li, S.X. Jin, J. Y. Lin, and H. X. Jiang, ※III-nitride-based planar lightwave circuits for long wavelength optical communications,§ IEEE J. Quantum Electronics 41, 100 (2005). Adobe

168. M. L. Nakarmi, N. Nepal, J. Y. Lin, and H. X. Jiang, "Unintentionally doped n-type Al0.67Ga0.33N epilayers"Appl. Phys. Lett.  86, 261902 (2005). Adobe

167. K. B. Nam, M. L. Nakarmi,  J. Y. Lin, and H. X. Jiang,"Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys"Appl. Phys. Lett.  86, 222108 (2005). Adobe

166. M. Khizar, Z. Y. Fan, K. H. Kim, J. Y. Lin, and H. X. Jiang, "Nitride deep-ultraviolet light-emitting diodes with microlens array" Appl. Phys. Lett.  86, 173504 (2005). Adobe

165. J. Shakya, K. Knabe, K. H. Kim, J. Li, J. Y. Lin, and H. X. Jiang , "Polarization of III-nitride blue and ultraviolet light-emitting diodes" Appl. Phys. Lett.  86, 091107 (2005). Adobe

164. M. L. Nakarmi, K. H. Kim, M. Khizar, Z. Y. Fan, J. Y. Lin and H. X. Jiang, "Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys"Appl. Phys. Lett.  86, 092108 (2005). Adobe

163. K. H. Kim, Z. Y. Fan, M. Khizar, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers,§ Appl. Phys. Lett.  85, 4777 (2004). Adobe

162. K. Zhu, M. L. Nakarmi, K. H. Kim, J. Y. Lin, and H. X. Jiang, ※Silicon Doping Dependence of Highly Conductive n-type Al0.7Ga0.3N,§ Appl. Phys. Lett.  85, 4669 (2004). Adobe

161. J. Shakya, K. H. Kim, T. N. Oder, J. Y. Lin, and H. X. Jiang, ※III-nitride blue and UV photonic-crystal light-emitting diodes,§  Proc. SPIE, 5530, 241 (2004).

160. M. L. Nakarmi, K. H. Kim, K. Zhu, J. Y. Lin and H. X. Jiang, ※Mg doped Al-rich AlGaN alloys for UV emitters,§  Proc. SPIE, 5530, 54 (2004).

159.  L. Chen, B. J. Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar,C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang,"Band-edge exciton states in AlN single crystals and epitaxial layers," Appl. Phys. Lett. 85, 4334 (2004).Adobe

158. M. L. Nakarmi, K. H. Kim, K. Zhu, J. Y. Lin, and H. X. Jiang, " Transport properties of highly conductive n-type Al-rich AlxGa1-xN  (x>= 0.7)," Appl. Phys. Lett.  85, 3769 (2004).  Adobe

157.   K. B. Nam, J. Li,  J. Y. Lin, and H. X. Jiang, ※Optical properties of AlN and GaN in elevated temperatures,§ Appl. Phys. Lett. 85, 3489 (2004). Adobe

155.  N. Nepal, M. L. Nakarmi, K. B. Nam, J. Y. Lin, and H. X. Jiang, ※Acceptor-bound exciton transition in Mg-doped AlN epilayer,§ Appl. Phys. Lett. 85, 2271 (2004). Adobe

154.  J. Shakya, J. Y. Lin and H. X. Jiang, ※Time-Resolved Electroluminescence Studies of III-Nitride Ultraviolet Photonic-Crystal Light-Emitting Diodes,§ Appl. Phys. Lett.  85, 2104 (2004). Adobe

153.  J. Shakya, K. H. Kim, J. Y. Lin, and H. X. Jiang, ※Enhanced Light Extraction in III-Nitride Ultraviolet Photonic Crystal Light-Emitting Diodes,§ Appl. Phys. Lett. 85, 142 (2004). Adobe

152.  K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Unique optical properties of AlGaN alloys and related ultraviolet emitters," Appl. Phys. Lett. 84, 5264 (2004). Adobe

151.  Z. Y. Fan, J. Y. Lin, and H. X. Jiang, "Recent Advances in III-Nitride  UV Materials and Devices", State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II,Proceedings Volume 2004-02

150. J. Shakya, J. Y. Lin and H. X. Jiang, ※Near Field Optical Study of AlGaN/GaN Quantum Well Waveguide,§ Appl. Phys. Lett.  84 1832 (2004). Adobe

149.   C. H. Chen and Y. F. Chen, Z. H. Lan, L. C. Chen, and K. H. Chen, H. X. Jiang and J. Y. Lin, ※Mechanism of enhanced luminescence in InxAlyGa1每x每yN quaternary epilayers,§ Appl. Phys. Lett. 84 1480 (2004). Adobe

148.   Y. S. Park, K. H. Kim, J. J. Lee, H. S. Kim, T. W. Kang, H. X. Jiang, and J. Y. Lin, ※X-ray diffraction analysis of the defect structure in AlGaN films grown by metal organic chemical vapor deposition,§ J. of Mater. Science 39, 1853(2004).  Adobe

147.   H. X. Jiang and J. Y. Lin, ※Carrier Dynamics in III-Nitrides Studied by Time-Resolved Photoluminescence,§ in Ultrafast Dynamical Processes in Semiconductors, edited by K. T. Tsen, Springer-Verlag (Berlin Heidelberg 2004). 

146. N. Nepal, K. B. Nam, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, J. M. Zavada, and R.G. Wilson, ※Optical properties of the nitrogen vacancy in AlN epilayers,§ Appl. Phys. Lett. 84, 1090 (2004). Adobe

145. J. M. Zavada, S. X. Jin, N. Nepal, J. Y. Lin, H. X. Jiang, P. Chow and B. Hertog, ※Electroluminescent properties of erbium-doped III-N light emitting diodes,§ Appl. Phys. Lett. 84, 1061 (2004). Adobe

144.   T. N. Oder, K. H. Kim, J. Y. Lin and H. X. Jiang, ※III-Nitride Blue and Ultraviolet Photonic Crystal Light Emitting Diodes,§ Appl.  Phys.  Lett.  84,  466 (2004). Adobe

143. J. Shakya, K. H. Kim, J. Li, J. Y. Lin, and H. X. Jiang, ※III-Nitride Photonic Crystals for Blue and UV Emitters§, Symposium Proceedings of Material Research Society Vol. 798, Y4.6.1 (2003)

142.   H. X. Jiang, J. Y. Lin, R. Hui, and J. Zavada, ※III-nitrides show promise for telecomm wavelengths,§ Laser Focus World, Nov. issue (2003). Adobe

141. J. Li, K. B. Nam, M. L. Nakarmi, J. Y. Lin, H. X. Jiang, Pierre Carrier, and Su-Huai Wei, "Band structure and fundamental optical transitions in wurtzite AlN," Appl. Phys. Lett. 83, 5163 (2003) Adobe

140. H. D. Sun, R. Macaluso, S. Calvez, M. D. Dawson,F. Robert, A. C. Bryce,J. H. Marsh,P. Gilet, L. Grenouillet, A. Million,K. B. Nam, J. Y. Lin, and H. X. Jiang,"Quantum well intermixing in GaInNAs/GaAs structures," J. Appl. Phys. 94, 7581 (2003).Adobe

139. Shih-Wei Feng, En-Chiang Lin, Tsung-Yi Tang, Yung-Chen Cheng, Hsiang-Chen Wang, C. C. Yang, Kung-Jen Ma, Ching-Hsing Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, "Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31,"Appl. Phys. Lett. 83, 3906 (2003).Adobe

138. R. M. Frazier, G. T. Thaler, C. R. Abernathy, S. J. Pearton, M. L. Nakarmi, K. B. Nam, J. Y. Lin, H. X. Jiang,J. Kelly, R. Rairigh, and A. F. Hebard, "Transition metal ion implantation into AlGaN,"J. Appl. Phys. 94, 4956 (2003).Adobe

137. K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, "Photoluminescence studies of Si-doped AlN epilayers,"Appl. Phys. Lett. 83, 2787 (2003).Adobe

136. R. Hui, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang," Birefringence of GaN/AlGaN optical waveguides,"Appl. Phys. Lett. 83, 1698 (2003). Adobe

135. T. N. Oder, J. Shakya, J. Y. Lin, and H. X. Jiang, "III-nitride photonic crystals," Appl. Phys. Lett. 83, 1231 (2003). Adobe

134. K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, "Mg acceptor level in AlN probed by deep ultraviolet photoluminescence," Appl. Phys. Lett. 83, 878 (2003). Adobe

133. R. M. Frazier, J. Stapleton, G. T. Thaler, C. R. Abernathy, S. J. Pearton, R. Rairigh, J. Kelly, A. F. Hebard, M. L. Nakarmi, K. B. Nam, J. Y. Lin, H. X. Jiang, J. M. Zavada and R. G. Wilson, "Properties of Co-, Cr- or Mn-implanted AlN," J. Appl. Phys. 94, 1592 (2003). Adobe

132. K. H. Kim, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang, "III-nitride ultraviolet light-emitting diodes with delta doping," Appl. Phys. Lett. 83, 566 (2003). Adobe


131. Young Shin Park, Kun Ho Kim, Jeoung Ju Lee, Hyeon Soo Kim, Tae Won Kang, Hong Xing Jiang and Jing Yu Lin, "Defect Reduction in AlxGa1-xN Films Grown by Metal Organic Chemical Vapor Deposition," Jpn. J. Appl. Phys. 42, 1231 (2003). Adobe

130. Z. Y. Fan, J. Li, J. Y. Lin, H. X. Jiang, Y. Liu, J. A. Bardwell, J. B. Webb, and H. Tang, AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors (MOSHFETs) with the Delta-Doped Barrier Layer," Symposium Proceedings of Materials Research Society, 743, 567 (2003).

129. K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Epitaxial growth and time-resolved photoluminescence studies of AlN epilayers," SPIE Proceedings, 4992, 202 (2003).

128. L. S. Yu, L. Jia, D. Qiao, S. S. Lau, J. Li, J. Y. Lin, and H. X. Jiang, "The origin of leaky characteristics of Schottky diode on p-GaN," IEEE Transaction on Electron Devices, 50, 292 (2003). Adobe

127. M. L. Nakarmi, K. H. Kim, J. Li, J. Y. Lin and H. X. Jiang, "Enhanced P-type Conductions in GaN and AlGaN by Mg-Delta-Doping," App. Phys. Lett. 82, 3041 (2003). Adobe

126. T. N. Oder, J. Shakya, J. Y. Lin and H. X. Jiang "Nitride Microlens Arrays for Blue and UV Wavelength Applications, Appl. Phys. Lett. 82, 3692 (2003). Adobe

125. H. X. Jiang and J. Y. Lin, "Advances in III-Nitride Microstructures and Micro-Size Emitters," J. of the Korean Physical Society, 42, S757 (2003).

124. J. Y. Lin and H. X. Jiang, "Recent Advances in III-Nitride Ultraviolet Photonic Materials and Devices," J. of the Korean Physical Society, 42, S535 (2003).

123. C. H. Chen, D. R. Hang, W. H. Chen, Y. F. Chen, H. X. Jiang and J. Y. Lin, ※Persistent Photoconductivity in InxAlyGa1-x-yN quaternary alloys,§ Appl. Phys. Lett. 82, 1884 (2003).Adobe

122. K.B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin and H. X. Jiang, ※Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers,§ Appl. Phys. Lett. 82, 1694 (2003).Adobe


121. W. Liang, K. T. Tsen, D. K. Ferry, K. H. Kim, J. Y. Lin, and H. X. Jiang, ※Studies of field-induced non-equilibrium electron transport in an InxGa1-xN (x»0.6) epilayer grown on GaN,§ Appl. Phys. Lett. 82, 1413 (2003).Adobe


120. Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung, C. C. Yang, Kung-Jeng Ma, Chih-Chiang Yan, Chen Hsu, J. Y. Lin, and H. X. Jiang, ※Strong green luminescence in quaternary InAlGaN thin films,§ Appl. Phys. Lett. 82, 1377 (2003).Adobe


119. R. Hui, S. Taherion, Y. Wan, J. Li, S.X. Jin, J. Y. Lin, and H. X. Jiang, ※GaN-based waveguide devices for long wavelength optical communications,§ Appl. Phys. Lett. 82, 1326 (2003).Adobe


118. J. Li, T. N. Oder, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Optical and Electrical Properties of Mg-doped p-type AlGaN," Appl. Phys. Lett. 80, 1210 (2002).Adobe ﹛
﹛

117. Z. Y. Fan, J. Li, J. Y. Lin, and H. X. Jiang,"Delta-doped AlGaN/GaN metal oxide semiconductor heterostructure field effect transistors with high breakdown voltages," Appl. Phys. Lett. 81, 4649 (2002). Adobe

116. J. Li, K. B. Nam, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Band-edge Photoluminescence of AlN Epilayers," Appl. Phys. Lett. 81, 3365 (2002). Adobe

115. K.B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin and H. X. Jiang, "Growth and Optical Studies of Two-Dimensional Electron Gas of Al-rich AlGaN/GaN Heterostructures," Appl. Phys. Lett. 81, 1809 (2002). Adobe

114. X. A. Cao, S. F. LoBoeuf, K. H. Kim, P. Sandvik, E. B. Stokes, A. Ebong, D. Walker, J. Kretchmer, J. Y. Lin, and H. X. Jiang, "Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes," Solid-State Electronics, 46, 2291 (2002).Adobe

113. K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Achieving highly conductive AlGaN alloys with high Al contents," Appl. Phys. Lett. 81, 1038 (2002). Adobe

112.T. N. Oder, J. Li, J. Y. Lin, and H. X. Jiang,"Exciton-polariton propagation in AlGaN/GaN quantum-well waveguides probed by time-resolved photoluminescence", Proceeding of SPIE 4643, 258 (2002).

111. J. Li K. B. Nam, T. N. Oder, K. H. Kim, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Time-resolved photoluminescence studies of Al-rich AlGaN alloys",Proceeding of SPIE 4643 250 (2002).

110. M. E. Aumer, S. F. LeBoeuf, B. F. Moody, S. M. Bedair,K. Nam, J. Y. Lin, and H. X. Jiang"Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures", Appl. Phys. Lett. 80, 3099 (2002). Adobe

109. G. Coli, K. K. Bajaj, J. Li, J. Y. Lin and H. X. Jiang,"Exciton Luminescence Linewidth in AlGaN Alloys with High Aluminum Concentrations", Appl. Phys. Lett. 80, 2907 (2002).Adobe

108. C. H. Chen, Y. F. Chen, H. X. Jiang, and J. Y. Lin, ""Mechanism of photoluminescence in GaN/AlGaN quantum wells"," Appl. Phys. Lett. 79, 3806 (2001). Adobe

107. J. Li, K. B. Nam, J. Y. Lin, and H. X. Jiang, "Optical and Electrical Properties of Al rich AlGaN Alloys," Appl. Phys. Lett. 79, 3245 (2001). Adobe

106. T.N. Oder, J.Y. Lin and H.X. Jiang, "Light Propagation properties in AlGAN/GaN Quantum Well Waveguides," Appl. Phys. Lett. 79, 2511 (2001). Adobe

105. D. R. Hang, C. H. Chen, Y. F. Chen, H. X. Jiang, and J. Y. Lin, "AlGaN/GaN band offset determined by deep level emission" J. Appl. Phys. 90, 1887 (2001). Adobe

104. Dai Lun, Zhang Bei, Lin Jingyu, and Jiang Hongxing, "Properties of optical resonant modes in III-Nitride semiconductor micro-cone cavities," Chinese Phys. Lett. 18, 437 (2001).

103. D. R. Hang, C. T. Liang, C. F. Huang, Y. H. Chang, Y. F. Chen, H. X. Jiang, and J. Y. Lin, ※Effective mass of 2DEG in GaN/AlGaN heterostructure,§ Appl. Phys. Lett. 79, 66 (2001). Adobe

102. H. X. Jiang and J. Y. Lin, ※Advances in III-Nitride Micro-Size Light Emitters,§ invited feature article for III-Vs Review, June/July 2001 issue. link

101. H. X. Jiang and J. Y. Lin, ※Microdisplays Based on III-Nitride Wide Band Gap Semiconductors,§ invited feature article for oe magazine (The Monthly Publication of SPIE-The internal Society for Optical Engineering), July 2001 issue. link

100. T.N. Oder, J.Y. Lin and H.X. Jiang, ※Fabrication and Optical Characterization of III-Nitride Sub-micron Waveguides,§ Appl. Phys. Lett. 79, 12 (2001). Adobe

99. C. H. Chen, Y. F. Chen, An Shih, S. C. Lee, and H. X. Jiang, ※Zone-Folding effect on Optical Phonon in GaN/Al0.2Ga0.8N superlattices,§ Appl. Phys. Lett. 78, 3035 (2001). Adobe

98. S. X. Jin, J. Shakya, J. Y. Lin, and H. X. Jiang, ※Size Dependence of III-Nitride Microdisk Light Emitting Diode Characteristics,§ Appl. Phys. Lett. 78, 3532 (2001). Adobe

97. L. Dai, B. Zhang, J. Y. Lin, and H. X. Jiang, ※Comparison of Optical Transitions in InGaN Quantum Well Structures and Microdisks,§ J. Appl. Phys. 89, 4951 (2001). Adobe

96. K. B. Nam, J. Li, K. H. Kim, J. Y. Lin, and H. X. Jiang, ※Growth and Deep UV Picosecond Time-Resolved Photoluminescence Studies of GaN/AlN Multiple Quantum Wells,§ Appl. Phys. Lett. 78, 3690 (2001). Adobe

95. H. X. Jiang, S. X. Jin, J. Li, J. Shakya, and J. Y. Lin, ※III-Nitride Blue Microdisplays,§ Appl. Phys. Lett. 78, 1303 (2001) Adobe

94. G. Coli, K. K. Bajaj, J. Li, J. Y. Lin, and H. X. Jiang, ※Linewidths of Excitonic Luminescence Transitions in AlGaN Alloys,§ Appl. Phys. Lett. 78, 1829 (2001). Adobe

93. T.N. Oder, J. Li, J.Y. Lin and H.X. Jiang, ※Fabrication and Characterization of InxAlyGa1-x-yN Ultraviolet Detectors,§ Symposium Proceedings of Materials Research Society, 2000.

92. J. Li, K. B. Nam, K. H. Kim, T. N. Oder, H. J. Jun, J. Y. Lin, and H. X. Jiang, ※Growth and Optoelectronic Properties of III-Nitride Quaternary Alloys,§ Proceedings of SPIE,  4280, 27 (2001).

91. J. Li, K. C. Zeng, E. J. Shin, J. Y. Lin, and H. X. Jiang, ※Optimizing GaN/AlGaN Multiple Quantum Well Structures by Time-Resolved Photoluminescence,§ Proceedings of SPIE 4280, 70 (2001).

90. C. J. Ellis, R. M. Mair, J. Li, J. Y. Lin, H. X. Jiang, J. M. Zavada, and R. G. Wilson, ※Optical Properties of pr Implanted GaN Epilayers and AlGaN Alloys,§ Materials Science & Engineering B - Solid State Materials for Advanced Technology 81, 167 (2001).

89. J.M. Zavada, C. J. Ellis, J. Y. Lin, H. X. Jiang, J. T. Seo, U. Hommerich, M. Thaik, R. G. Wilson, P. A. Grudowski, and R. D. Dupuis, ※Annealing behavior of luminescence from erbium-implanted GaN,§ Materials Science & Engineering B - Solid State Materials for Advanced Technology 81, 127 (2001).

88. H. X. Jiang, J. Y. Lin, and W. W. Chow  ※Time-Resolved Photoluminescence Studies of III-Nitrides,§ Chapter 1 in "Optical Properties of III-Nitrides" for the book series entitled ※Optoelectronic Properties of Semiconductors and Superlattices," Volume I, edited by H. X. Jiang and M .O. Manasreh, to be published by Gordon & Breach Science Publisher (March, 2001).

87. H. X. Jiang and J. Y. Lin, ※Persistent photoconductivity in III-nitrides,§ Chapter 5 in "III-Nitride Semiconductors: Electrical, Structural and Defects Properties" edited by M. O. Manasreh, (Elsevier Science, 2000).

86. W. H. Sun, S. T. Wang, J. C. Zhang, K. M. Chen, G. G. Qin, Y. Z. Tong, Z. J. Yang, G. Y. Zhang, Y. M. Pu, Q. L. Zhang, J. Li, J. Y. Lin, anf H. X. Jiang, ※Formation and dissolution of microcrystalline graphite in carbon-implanted GaN,§ J. Appl. Phys. 88, 5662 (2000). Adobe

85. S. X. Jin, J. Li, J. Y. Lin, and H. X. Jiang §InGaN/GaN Quantum Well Interconnected Microdisk Light Emitting Diodes,§ Appl. Phys. Lett. 77, 3236 (2000). Adobe

84. J. Z. Li, J. Y. Lin, H. X. Jiang, and G. Sullivan, ※Transient Characteristics of AlGaN/GaN Heterojunction Field Effect transistors,§ Appl. Phys. Lett. 77, 4046 (11 Dec 2000) Adobe  

83. J. Li, K.B. Nam, K. Kim, J.Y. Lin, and H.X. Jiang. "Growth and optical properties of InAlGaN Quaternary Alloy." Applied Physics Lett. 78, 61(Jan 1 2001) issue    Adobe

82. M.E. Aumer, S.F. Leboeuf, S.M. Bedair, M. Smith, J.Y. Lin, and H.X. Jiang "Effects of tensil and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures" Appl. Phys. Lett. 77, 821 (2000). Adobe

81. T. N. Oder, J. Li, J. Y. Lin, and H. X. Jiang, ※Photoresponsivity of ultraviolet detectors based on InAlGaN quaternary,§ Appl. Phys. Lett. 77, 791 (2000). Adobe

80. Eun-joo Shin, J. Li, J. Y. Lin, and H. X. Jiang, ※Barrier Width Dependence of Quantum Efficiencies of GaN/AlxGa1-xN Multiple Quantum Wells,§ Appl. Phys. Lett. 77, 1170 (2000). Adobe

79. C.H. Wei, Z. Y. Xie, J.H. Edgar, K.C. Zeng, Y.Y. Lin, H.X. Jiang, J. Chaudhuri, C. Ignatiev, and D.N.Braski, "MOCVD Growth of BGaN on 6H-SiC (0001) Substrates," J. Electron. Mater.29, 452 (2000).

78. H.S. Kim, R.A.Mair, J. Li, Y. Lin, H.X. Jiang, "Exciton Localization Dynamics in AlGaN Alloys," Proceeding of Society of Photo-Optical Instrumentation Engineers (SPIE), Vol 3940, 139 (2000). 

77.  K.T. Tsen, C. Koch, Y. Chen, H.Morkoe, J. Li, J.Y. Lin, H.X. Jiang, "Electronic Raman Scattering From Mg-doped Wurtzite GaN," Symposium Proceedings of Materials Research Society,  Vol. 595  W11.12.1 . 

 76. J.Z. Li, J. Li, J.Y. Lin, and H.X. Jiang, "Correlation Between Sheet Carrier Density and Mobility Product and Persistent Photoconductivity in AlGaN/GaN Heterostructures, "Symposium Proceedings of Material Research Society Vol. 595 W11.12.1    Adobe

75. K.C. Zeng, J.Z. Li, J. Li, J.Y. Lin, and H.X. Jiang, "Well-width dependence of the quantum efficiencies of GaN/AlxGa1-xN multiple quantum wells" Appl. Phys. Lett. 76, 3040 (2000)      Adobe

74. K.T. Tsen, C. Koch,  Y.Chen, H. Morkoc, J.Z. Li, J. Li, J.Y. Lin, and H.X. Jiang, " Observation of electronic Raman scattering from Mg-doped wurtzite GaN" Appl. Phys. Lett. 76, 2889 (2000)   Adobe

73. K.C. Zeng, J. Li, J.Y. Lin, and H.X. Jiang, "Optimizing Growth Conditions for GaN/AlGaN Multiple Quantum Well Structures," Appl. Phys. Lett. 76, 864 (2000) Adobe

72. H.S. Kim, R.A. Mair, J. Li, J.Y. Lin and H.X. Jiang, "Time-Resolved Photoluminescence Studies of AlxGa1-xN Alloys," Appl. Phys. Lett. 76, 1252 (2000) Adobe

71. K.C. Zeng, J.Y. Lin, and H.X. Jiang, "Effects of Alloy Disorder on the Transport Properties of AlxGa1-xN Epilayers Probed by Persistent Photoconductivity," Appl. Phys. Lett. 76, 1728 (2000).    Adobe

 70. S.X. Jin, J. Li, J.Z. Li, J.Y. Lin and H.X. Jiang, "GaN Microdisk Light Emitting Diodes," Appl. Phys. Lett. 76, 631 (2000)  Adobe

69. D. Qiao, L.S. Yu, S.S. Lau, J. Redwing, J.Y. Lin, and H.X. Jiang, "Dependence of Ni/AlGaN Schottky Barrier Height on Al Mode Fraction," J. Appl. Phys. 87, 801 (2000)     Adobe

68. R.A. Mair, J.Y. Lin, H.X. Jiang, E.D. Jones, A.A. Allerman, and S.R. Kurtz, "Time-Resolved Photoluminescence Studies of InxGa1-xAs1-yNy," Appl. Phys. Lett. 76, 188 (2000)       Adobe

67. H.S. Kim, H.X. Jiang, J.Y. Lin, W.W. Chow, A. Botchkarev, and H. Morkoc, "Piezoelectric Effects on the Dynamics of Optical Transitions in GaN/AlGaN Multiple Quantum Wells," Proceeding of Society of Photo-Optical Instrumentation Engineers (SPIE), Vol 3624, 198 (1999).

66. J.Z. Li,  H.X. Jiang, J.Y. Lin, J.F. Geisz, and Sarah R. Kurtz, "Persistent Photoconductivity in Ga1-xInxNyAs1-y" Appl. Phys. Lett. 75, 1899 (1999)      Adobe

65. M.O Manasreh, J.M. Baronowsky, K. Pakula,  H.X. Jiang, J.Y. Lin, "Localized Vibrational Modes of Carbon-Hydrogen Complexes in GaN," Appl. Phys. Lett. 75, 659 (1999).   Adobe

64. J.M. Zavada, R.A. Mair, C.J. Ellis,  H.X. Jiang, J.Y. Lin, and R.G. Wilson, "Optical Transitions in Pr Ion-Implanted GaN," Appl. Phys. Lett. 75, 790 (1999).   Adobe

63.  H.X. Jiang and J.Y. Lin, "Optical properties of III-nitride microstructures," Proceeding of Society of Photo-Optical Instrumentation Engineers (SPIE), (1999), invited.

62. H.X. Jiang, J.Y. Lin , K.C. Zeng, and W. Yang, "Optical resonance modes in GaN pyramid Microcavities, Appl. Phys. Lett. 75, 763 (1999).        Adobe

61. K.C. Zeng, L. Dai, J.Y. Lin, and H.X. Jiang, "Optical resonance mode in InGaN/GaN multiple-quantum-well microring cavities," Appl. Phys. Lett. 75, 2563 (1999).     Adobe

60. L.S. Yu, D. Qiao, S. S. Lau, J. M. Redwig, J.Y. Lin , and H.X. Jiang, "Measurement of the Al mole fraction of bulk AlGaN and AlGaN/GaN Heterostructure by photoconductance spectra," J. Appl. Phys. (Sept. 1, 1999)        Adobe

59. K.C. Zeng, J. Y. Lin, H. X. Jiang, and W. Yang, "Optical Properties of High Quality Insulating GaN Epilayers," Appl. Phys. Lett. 74, 3821 (1999).          Adobe

58. K.C. Zeng, J. Y. Lin, H. X. Jiang, and W. Yang, "Optical Properties of GaN Pyramids," Appl. Phys. Lett. 74, 1227 (1999).     Adobe

57. H. X. Jiang and J. Y. Lin, "Mode Spacing Anomaly in InGaN Blue Lasers," Appl. Phys. Lett. 74, 1066 (1999). Adobe

56. R. Mair, J. Li, S. K. Duan, J. Y. Lin, and H. X. Jiang, "Time-Resolved Photoluminescence of an Ionized Donor-Bound Exciton in GaN," Appl. Phys. Lett. 74, 513 (1999).    Adobe

55. C. H. Wei, Z. Y. Xie, J. H. Edgar, K. C. Zeng, J. Y. Lin, H. X. Jiang, G. Jiji, J. Chaudhuri, and D. N. Braski, "Growth and Characterization of Bx Ga1-xN on 6H-SiC (0001)," MRS Internet J. Nitride Semicond. Res. 4S1, G3.79 (1999).   Adobe

54. H.S. Kim, J. Y. Lin, H. X. Jiang, W. W. Chow, A. Botchkarev, and H. Morkoc "Piezoelectric effects in GaN/AlGaN Multiple Quantum Wells Probed By Picosecond Time-Resolved Photoluminescence," MRS Internet J. Nitride Semicond. Res. 4S1, G3.3 (1999).   Adobe

53. J.M. Zavada, M. Thaik, U. H?mmerich, J. D. MacKenzie, C. R. Abernathy, F. Ren, H. Shen, J. Pamulapati, H. X. Jiang, J. Y. Lin, and R. G. Wilson, "Luminescence From Er-Doped GaN Thin Films," MRS Internet J. Nitride Semicond. Res. 4S1, G11.1 (1999), invited.     Adobe

52. H. Morkoc R. Cingolani, W. Lambrecht, B. Gil, H. X. Jiang, J. Lin, D. Pavlidis, and K.Shenai "Material Properties of GaN in the Context of Electron Devices," MRS Internet J. Nitride Semicond. Res. 4S1, G1.2 (1999), invited.     Adobe

51. H. Morkoc R. Cingolani, W. Lambrecht, B. Gil, H. X. Jiang, J. Lin, and D. Pavlidis "Spontaneous Polarization and Piezoelectric Field in Nitride Semiconductor Heterostructures", J. of the Korean Physical Society, 34 S224-S233 (1999), invited.

50. H.S. Kim, J. Y. Lin, H. X. Jiang, W. W. Chow, A. Botchkarev, and H. Morkoc, "Piezoelectric Effects on the Optical Properties of GaN/AlGaN Multiple Quantum Wells," Appl. Phys. Lett. 73, 3426 (1998).   Adobe

49. S. K. Duan, X. Teng, Y. Wang, G. Li, H. X. Jiang, P. Han, and D. C. Lu, "MOVPE Growth of GaN and LED on (111) MgAl2O4," J. of Crystal Growth 175 (1998).

48. H.X. Jiang and J. Y. Lin, "Persistent Photoconductivity in GaN," Chapter A3.6 in Gallium Nitride and Related Compounds, EMIS Datareview Series, Edited by J. Edgar, S. Strite, I. Akasaki, and H. Amano, and C. Wetzel, (The Institute of Electrical Engineers, London, 1999).

47. H.X. Jiang and J. Y. Lin, "Time-Resolved Photoluminescence Studies of GaN," Chapter A3.5 in Gallium Nitride and Related Compounds, EMIS Datareview Series, Edited by J. Edgar, S. Strite, I. Akasaki, and H. Amano, and C. Wetzel, (The Institute of Electrical Engineers, London, 1999).

46. D.N. McIlroy, S.D. Hwang, K. Yang, N. Remmes, P.A. Dowben, A.A. Ahmad, N.J. Ianno, J. Z. Li, J. Y. Lin, and H. X. Jiang, "The Incorporation of Nickel and Phosphorus Dopants Unto Boron-Carbon Alloy Thin Films," Appl. Phys. A67, 335 (1998).

45. K.C. Zeng, R. Mair, J. Y. Lin, H. X. Jiang, W. W. Chow, A. Botchkarev, and H. Morkoc, Appl. Phys. Lett., "Plasma Heating in Highly Excited GaN/AlGaN Multiple Quantum Wells," Appl. Phys. Lett. 73, 2476 (1998).   Adobe

44. K.C. Zeng, J. Y. Lin, and H. X. Jiang, "Collective Effects of Interface Roughness and Alloy Disorder in InGaN/GaN Multiple Quantum Wells," Appl. Phys. Lett. 73, 1724 (1998).   Adobe

43. H.B. Yu, H. Htoon, A. Delozanne, C. K. Shih, P.A. Grudowski, R. D. Dupuis, K.C. Zeng, R. Mair, J. Y. Lin, and H. X. Jiang "Dynamics of localized excitons in InGaN/GaN quantum," J. Vac. Sci. & Tech. B16, 2215 (1998).     Adobe

42. J.Z. Li, J. Y. Lin, H. X. Jiang, and M. A. Khan, "Effects of Persistent Photoconductivity on the Characteristic Performance of an AlGaN/GaN Heterostructure Ultraviolet Detector," Appl. Phys. Lett. 72, 2868 (1998).   Adobe

41. R. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, W. Kim, A.Botchkarevand, H. Morkoc, and M. Asif Khan, "Optical Modes Within III-Nitride Multiple Quantum Well Microdisk Cavities," Appl. Phys. Lett. 72, 1530 (1998).   Adobe

40. H.X. Jiang and J. Y. Lin, "Dynamics of Fundamental Optical transitions in GaN," Proceeding of Society of Photo-Optical Instrumentation Engineers (SPIE), Vol 3277, 108 (1998), invited.

39. K.C. Zeng, M. Smith, J. Y. Lin, H. X. Jiang, H. Morkoc, and M. Asif Khan, "Optical Transitions and Dynamic Processes in III-Nitride Epilayers and Multiple Quantum Wells," IEEE International Symposium on Compound Semiconductors, edited by Mike Melloch and Mark Reed, p235, 1998 IEEE.

38. R. Mair, K.C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, H. Tang, W. Kim, A. Botchkarevand, H. Morkoc, and M. Asif Khan, "Photoluminescence Properties of GaN/AlGaN Multiple Quantum Well Micro-disks," Symposium Proceedings of Materials Research Society, Vol 482, 649 (1998).

37. K.C. Zeng, M. Smith, J. Y. Lin, H. X. Jiang, H. Morkoc, and M. Asif Khan, "Well Thickness and Doping Effects, and Room Temperature Emission Mechanisms in InGaN/GaN and GaN/AlGaN Multiple Quantum Wells," Symposium Proceedings of Materials Research Society, Vol 482, 643 (1998).

36.R. Mair, K.C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, H. Tang, W. Kim, A. Botchkarevand and H. Morkoc, "Optical Properties of GaN/AlGaN Multiple Quantum Well Micro-disks," Appl. Phys. Lett. 71, 2898 (1997).    Adobe

35. J. Z. Li, J. Y. Lin, H. X. Jiang, A. Khan, Q. Chen, A. Salvador, A. Borchkarev, and H. Morkoc, "Persistent Photoconductivity in p-Type GaN Epilayers and n-type AlGaN/GaN Heterostructures," Symposium Proceedings of Materials Research Society, Fall, 1996, Vol. 449, 537 (1997).

34. M. Smith, J. Y. Lin, H. X. Jiang, A. Khan, Q. Chen, A. Salvador, A. Borchkarev, and H. Morkoc, "Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells," Symposium Proceedings of Materials Research Society, Vol 449, 829 (1997).

33. K.C. Zeng, J. Y. Lin, H. X. Jiang, A. Salvador, G. Popovici, H. Tang, W. Kim, and H. Morkoc, "Effects of Well Thickness and Si-Doping on the Optical Properties of GaN/AlGaN Multiple Quantum Wells," Appl. Phys. Lett. 71, 1368 (1997).  Adobe

32. K.C. Zeng, M. Smith, J. Y. Lin, H. X. Jiang, J. C. Robert, E. L. Piner, F. G. McIntosh, S. M. Bedair, and J. Zavada, "Optical Transitions in InGaN/AlGaN Single Quantum Wells," J. Vac. & Sci. Tech. B15, 1139 (1997).     Adobe

31. J.Z. Li, J. Y. Lin, H. X. Jiang, M. Asif Khan, and Q. Chen, "Two-Dimensional Electron Gas in AlGaN/GaN Heterostructure," J. Vac. & Sci. Tech. B15, 1117 (1997).     Adobe

30. M. Smith, K. C. Zeng, J. Y. Lin, "Effects of Well Thickness on the Light Emission Properties in InGaN/GaN and GaN/AlGaN Multiple Quantum Wells," 1997 Digest of the LEOS Summer Topical Meeting on GaN Materials, Processing, and Devices, p31.

29. J.Z. Li, J. Y. Lin, H. X. Jiang, M. Asif Khan, and Q. Chen, "Persistent Photo-conductivity and Two Dimensional Electron Gas in AlGaN/GaN Heterostructures," J. Appl. Phys. 82, 1227 (1997).    Adobe

28. M. Smith, J. Y. Lin, H. X. Jiang, and A. Khan, "Room Temperature Intrinsic Optical Transitions in GaN Epilayers: the Band-to-Band versus Excitonic Transition," Appl. Phys. Lett. 71, 635 (1997).    Adobe

27. M. Smith, J. Y. Lin, H. X. Jiang, A. Khan, Q. Chen, A. Salvador, A. Borchkarev, and H. Morkoc, "Exciton-Phonon Interactions in InGaN/GaN and GaN/AlGaN Multiple Quantum Wells," Appl. Phys. Lett. 70, 2882 (1997).     Adobe

26. R.J. Bandaranayake, J. Y. Lin, H. X. Jiang, and C. M. Sorensen, "Synthesis and Properties of Cd1-xMnxS Diluted Magnetic Semiconductor Ultrafine Particles," J. of Magnetism & Magnetic Materials, 169, 289 (1997).

25. C.J. Sun, M. Zubair Anwar, Q. Chen, J. W. Yang, M. Asif Khan, M. S. Shur, A. D. Bykhovski, Z. Liliental-Weber, C. Kisielowski, M. Smith, J. Y. Lin, and H. X. Jiang, "Quantum Shift of Band-Edge Stimulated Emission in InGaN-GaN Multiple Quantum Well Light-Emitting Diodes," Appl. Phys. Lett. 70, 2978 (1997).    Adobe

24. S.D. Hwang, K. Yang, P. A. Dowben, A. A. Ahmad, N. J. Ianno, J. Z. Li, J. Y. Lin, H. X. Jiang, and D. N. Mcllroy, "Fabrication of n-Type Nickel Doped B5C1+d Homojunction and Heterojunction Diodes," Appl. Phys. Lett. 70, 1028 (1997).  Adobe

23. H.X. Jiang, J. Y. Lin, M. Asif Khan, Q. Chen, and J. W. Yang, "Surface Emission of InxGa1-xGa Epilayers under Strong Optical Excitation," Appl. Phys. Lett. 70, 984 (1997).  Adobe

22. M. Smith, J. Y. Lin, H. X. Jiang, A. Salvador, A. Botchkarev, H. Kim, and H. Morkoc "Optical Transitions in GaN/AlxGa1-xN Multiple Quantum Wells Grown by Molecular Beam Epitaxy," Appl. Phys. Lett. 69, 2453 (1996).   Adobe

21. M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, M. Asif Khan, and Q. Chen, "Time-Resolved Photoluminescence Studies of InGaN Epilayers," Appl. Phys. Lett. 69, 2837 (1996).      Adobe

20. J.Z. Li, J. Y. Lin, H. X. Jiang, A. Salvador, A. Botchkarev, and H. Morkoc, "Nature of Mg Impurities in GaN," Appl. Phys. Lett. 69, 1474 (1996).    Adobe

19. M. Smith, J. Y. Lin, and H. X. Jiang, "Disorder and Persistent Photoconductivity in ZnxCd1-xSe Semiconductor Alloys," Phys. Rev. B54, 1471 (1996).    Adobe

18. H. Morkoc, W. Kim, O. Aktas, A. Salvador, A. Botchkarev, D. C. Reynolds, D. C. Look, M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, T. J. Schmidt, X. H. Yang,W. Shan, and J. J. Song, "Optical Properties of Mg-GaN, GaN/AlGaN SCH Structures, and GaN on ZnO Substrates," Symposium Proceedings of Materials Research Society, 395, p527, 1996, invited.

17. M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, M. Asif Khan, and C. J. Sun, "Free Excitonic Transitions in GaN Grown by Metal-Organic Chemical Vapor Deposition,," J. Appl. Phys. 79, 7001 (1996). Adobe

16. G. D. Chen, M. Smith, J. Y. Lin, H. X. Jiang, S.-H. Wei, M. Asif Khan, and C. J. Sun, "Fundamental Optical Transitions in GaN," Appl. Phys. Lett. 68, 2784 (1996).  Adobe

15. G. D. Chen, J. Y. Lin, and H. X. Jiang, "Effects of Electron Mass Anisotropy on Hall Factors in 6H-SiC," Appl. Phys. Lett. 68, 1341 (1996).    Adobe

14. C. Johnson, J. Y. Lin, H. X. Jiang, M. Asif Khan, and C. J. Sun, "Metastability and Persistent Photoconductivity in Mg-Doped P-type GaN," Appl. Phys. Lett. 68, 1808 (1996).       Adobe

13. M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, A. Salvador, W. Kim, O. Aktas, A. Botchkarev, and H. Morkoc, "Mechanisms of Band-Edge Emissions in Mg-Doped P-type GaN," Appl. Phys. Lett. 68, 1883 (1996).      Adobe

12. G.D. Chen, M. Smith, J. Y. Lin, H. X. Jiang, A. Salvador, B. N. Sverdlov, A. Botchkarev, and H. Morkoc, "Photoluminescence Studies of Band-Edge Transitions in GaN Epitaxial Layers Grown by Molecular Beam Epitaxy," J. Appl. Phys. 79, 2675 (1996). Adobe

11 M. Smith, G. D. Chen, J. Z. Li, J. Y. Lin, H. X. Jiang, A. Salvador, W. Kim, O. Aktas, A. Botchkarev, and H. Morkoc, "Excitonic Recombination in GaN Grown by Molecular Beam Epitaxy," Appl. Phys. Lett. 67, 3387 (1995).   Adobe

10. M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, M. Asif Khan, and C. J. Sun, "Acceptor-Bound Exciton Recombination in p-type GaN," Appl. Phys. Lett. 67, 3295 (1995).    Adobe

9. G.D. Chen, M. Smith, J. Y. Lin, H. X. Jiang, M. Asif Khan, and C. J. Sun, "Neutral-Donor-Bound Exciton Recombination Dynamics in GaN Grown by Metal- Organic Chemical Vapor Deposition," Appl. Phys. Lett. 67, 1653 (1995).    Adobe

8. M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, A. Salvador, B. N. Sverdlov, A. Botchkarev, and H. Morkoc, "Dynamics of a Band-Edge Transition in GaN Grown by Molecular Beam Epitaxy," Appl. Phys. Lett. 66, 3474 (1995).    Adobe

7. R.J. Bandaranayake, G. W. Wen, J. Y. Lin, H. X. Jiang, and C. M. Sorensen, "Structural Phase Behavior in II-VI Semiconductor Quantum Dots," Appl. Phys. Lett. 67, 831 (1995).     Adobe

6. G.W. Wen, J. Y. Lin, and H. X. Jiang, "Quantum-Confined Stark Effects in Semiconductor Quantum Dots," Phys. Rev. B52, 5913 (1995).  Adobe

5. R.J. Bandaranayake, J. Y. Lin, H. X. Jiang, and C. M. Sorensen, "Structure and Spin-Glass Properties of Cd0.5Mn0.5S Diluted Magnetic Semiconductor Quantum Dots," IEEE, Transactions on Magnetics, 31, 3761 (1995).

4. M. Smith, J. Y. Lin, and H. X. Jiang, "Transport Properties due to Alloy Disorder in ZnxCd1-xSe," Proc. of 22nd International Conference on the Physics of Semiconductors, 3, 1827 (1995).

3. A. Dissanayake, W. Hein, J. Y. Lin, and H. X. Jiang, "Exciton Dynamics and Quantum- Confined Stark Effects in CdS1-xSex Quantum Dots," Proc. of 22nd International Conference on the Physics of Semiconductors, 1, 85 (1995).

2. M. Smith, J. Y. Lin, and H. X. Jiang, "Metal-Insulator Transition In Semiconductor Alloys Probed by Persistent Photoconductivity," Phys. Rev. B51, 4132, (1995). Adobe

1. A.S. Dissanayake, J. Y. Lin, and H. X. Jiang, "Quantum-Confined Stark Effects in CdS1-xSex Quantum Dots," Phys. Rev. B51, 5457, (1995).    Adobe


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