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Materials Growth
Our focus is to optimize MOCVD
growth conditions for III-nitrides, particularly for AlGaN ternary alloys with
high Al contents, including pure AlN. New methods to further reduce crystal
defect density and enhanced doping efficiency will be explored. Because of our
unique optical measurement capabilities, we are equipped with ˇ°eyesˇ± for
monitoring the material quality as well as for probing the fundamental optical
properties of Al-rich AlGaN (including pure AlN).
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Representative Publications:
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