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Applications are invited for postdoctoral
research associate positions working in the area of GaN and related compounds. The
positions involve materials synthesis, device processing, and studies of optical and
transport properties of the group III-V nitrides. Major
facilities of the KSU physics semiconductor group include two MOCVD systems for the growth
of III-nitride materials (GaN, InN, AlN, alloys, multiple quantum well and heterojunction
structures), LEO 440 SEM system with e-beam lithograph capability,
photolithograph systems, a Plams-Therm Series 790 ICP dry etching system,
picosecond and femtosecond time-resolved laser spectroscopy systems operating from IR to
deep UV, and Hall, photo-conductivity and conductivity transient measurement facilities.
For more information about the group, please check http://www.phys.ksu.edu/area/GaNgroup. Candidates should have a strong
background in experimental semiconductor physics and the ability to work independently.
Send letter of application and vita including names, phone numbers, and email
addresses of three references to Prof. H.X. Jiang or Prof. J.Y. Lin, Department of
Physics, 116 Cardwell Hall, Kansas State University, Manhattan, KS 66506-2601 [Tel(785)
532-1627 or 532-1614, Fax (785) 532-5636]. Screening
of applications will begin June 1, 2001 and continue until the positions are filled.
KSU is an equal opportunity employer and actively seeks diversity among its
employees.
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