Barney L. Doyle (Physics - KSU Class of 1971) has been presented his third R&D-100 Award at a ceremony held in Chicago on October 20, 2005. R&D-100 Awards are considered the “Oscars of Invention” and are given out annually by the Chicago-based R&D Magazine to the 100 most significant technology-based inventions of the year. Doyle won his first R&D-100 for the eXternal Micro Ion Beam Analysis (X-MIBA) system in 1987 and his second was in 2001 for the Ion Electron Emission Microscope (IEEM). This year's invention was the Ion Photon Emission Microscope (IPEM), and while its name and application is quite similar to the IEEM, it is an entirely new and different device. Doyle is the manager of the Radiation-Solid Interactions Physics Department at Sandia National Laboratories in Albuquerque, NM, and over the years his group has won two additional R&D-100s for a total of five, the most of any department at Sandia.
The IPEM is a new multidimensional high-resolution single-ion nuclear-microscope. Using MeV-energy ions from an accelerator or radioactive source, IPEM is capable of microscopically mapping charge collection and other single-ion induced effects, such as logic upsets, in semiconductor and/or micro-electronic devices. IPEM can also be used to microscopically map the mobility, m, carrier lifetime, t, and the important mt-product of semiconductors. As such it has identical capabilities as traditional single-ion nuclear microprobe analysis with the advantage that the ion beam does not have to be focused, which ameliorates the use of costly and complicated nuclear microprobe forming systems. Expensive accelerators can even be avoided by using radioactive sources. Also, because this full-field microscope utilizes light produced by the ions, IPEM can be performed in air or vacuum.
Instead of focusing high-energy ions, the IPEM technique is based on determining the position an individual ion enters the surface of the sample by projection optical microscopy. These position signals are then correlated with the ion-induced signal generated in the sample target or device under test (DUT), such as a malfunction in an integrated circuit or the measurement of charge collection or current transients.