Zhaoyang Fan
Research Assistant Professor
Address:	313 Cardwell Hall
Phone:	(785) 532-2846
E-mail:	zyfan@phys.ksu.edu
Group Webpage
Ph.D. Northwestern University, 2001
M.E.  Tsinghua University, 1994
B.E.  Tsinghua University, 1991

Research Area

III-Nitride Semiconductor Materials, Devices and Physics

Recent Selected Publications

• Z. Y. Fan, J. Y. Lin, and H. X. Jiang, “III-nitride deep ultraviolet micro- and nano-photonics,” Proc. SPIE 6127, 61271C (2006), invited.
• Z. Y. Fan, J. Li M. L. Nakarmi J. Y. Lin, and H. X. Jiang, “AlGaN/GaN/AlN quantum-well field-effect transistors with highly resistive AlN epilayers,” Appl. Phys. Lett. 88, 073513 (2006).
• M. Khizar, Z. Y. Fan, K. H. Kim, J. Y. Lin, and H. X. Jiang, "Nitride deep-ultraviolet light-emitting diodes with microlens array," Appl. Phys. Lett. 86, 173504 (2005).
• M. L. Nakarmi, K. H. Kim, M. Khizar, Z. Y. Fan, J. Y. Lin and H. X. Jiang, "Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys," Appl. Phys. Lett. 86, 092108 (2005).
• K. H. Kim, Z. Y. Fan, M. Khizar, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “AlGaN-based Ultraviolet Light-Emitting Diodes Grown on AlN Epilayers,” Appl. Phys. Lett. 85, 4777 (2004).
• Z. Y. Fan, J. Y. Lin, and H. X. Jiang, “Recent advances in III-nitride UV Materials and Devices,” Electrochem. Soc. PV2004-02, 24 (2004), invited.