Jingyu Lin
Professor
Address:	310 Cardwell Hall
Phone:	(785) 532-1614
E-mail:	jylin@phys.ksu.edu
Group Webpage
Ph.D. Syracuse University, 1989
B.S.   State University of New York, College at Oneonta, 1983

Research Area

Semiconductor Physics & Devices

Current Interests

• III-Nitride wide band gap semiconductor epitaxial growth
• Micro- and nano-photonic device physics and processing
• Optical and transport properties of semiconductors
• III-Nitrides for solid-state lighting, biosensing, and harvesting energy
• Er-doped semiconductor materials for optical communications

Past Interests

• Defects in semiconductors
• Effects of disorders in semiconductor materials system
• Quantum stark-effects
• Fundamental optical transitions in II-VI semiconductors

Research Support

• Department of Energy
• National Science Foundation
• National Aeronautics & Space Administration
• Army Research Office
• Air Force Office of Scientific Research
• Defense Advanced Research Projects Agency
• Kansas Technology Enterprise Corporation
  

Recent Selected Publications

• N. Nepal, J. Li, M. L. Nakarmi J. Y. Lin, and H. X. Jiang, “Exciton localization in AlGaN alloys,” Appl. Phys. Lett. 88, 062103 (2006).
• Z. Y. Fan, J. Li M. L. Nakarmi J. Y. Lin, and H. X. Jiang, “AlGaN/GaN/AlN quantum-well field-effect transistors with highly resistive AlN epilayers,” Appl. Phys. Lett. 88, 073513 2006).
• N. Nepal, J. Shakya, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Deep ultraviolet photoluminescence studies of AIN photonic crystals,” Appl. Phys. Lett. 88, 1331139 (2006).
• J. Li, J. Y. Lin and H. X. Jiang, “Growth of III-nitride Photonic Structures on Large Area Silicon Substrates,” Appl. Phys. Lett. 88,171909 (2006).
• N. Nepal, K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Higher lying conduction band in GaN and AlN probed by photoluminescence spectroscopy,” Appl. Phys. Lett. 88, 261919 2006).
• N. Nepal, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Photoluminescence studies of impurity transitions in AlGaN alloys,” Appl. Phys. Lett. 89, 092107 (2006).

recent publication list