Hongxing Jiang

Hongxing Jiang
University Distinguished Professor
Address: 308 Cardwell Hall
Phone: (785) 532-1627
E-mail: jiang@phys.ksu.edu
Group Webpage
Ph.D., Syracuse University, 1986
B. S. Fudan University, China, 1981

Research Area

Semiconductor Physics & Devices

Current Interests
  • III-Nitride wide band gap semiconductor epitaxial growth
  • Micro- and nano-photonic device physics and processing
  • Optical and transport properties of semiconductors
  • III-Nitrides for solid-state lighting, biosensing, and harvesting energy
  • Er-doped semiconductor materials for optical communications
Past Interests
  • Defects in semiconductors
  • Effects of persistent photoconductivity
  • Diluted magnetic semiconductor nanoparticles
  • Optical and transport properties of low dimensional semiconductor systems

Research Support

Recent Selected Publications

  • “Excitation dynamics of the 1.54  µm emission in Er doped GaN synthesized by metal organic chemical vapor deposition,” C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, Appl. Phys. Lett. 90, 051110 (2007).
  • T. M. Al Tahtamouni, N. Nepal, J. Y. Lin, H. X. Jiang, and W. W. Chow, “Growth and photoluminescence studies of Al-rich AlN/AlxGa1–xN quantum wells,” Appl. Phys. Lett. 89, 131922 (2006).
  • C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 89, 151903 (2006).
  • M. L. Nakarmi, N. Nepal, C. Ugolini, T. M. Altahtamouni, J. Y. Lin, and H. X. Jiang, “Correlation between optical and electrical properties of Mg-doped AlN epilayers,” Appl. Phys. Lett. 89, 152120 (2006).
  • N. Nepal, M. L. Nakarmi, H. U. Jang, J. Y. Lin, and H. X. Jiang, “Growth and photoluminescence studies of Zn-doped AlN epilayers,” Appl. Phys. Lett. 89, 192111 (2006).
  • J. Li, Z. Y. Fan, R. Dahal, M. L Nakarmi, J. Y. Lin, and H. X. Jiang, “200  nm deep ultraviolet photodetectors based on AlN,” Appl. Phys. Lett. 89, 213510 (2006).