The MOCVD (Metal-Organic Chemical Vapor Deposition) Systems

Our reactors are compter-controlled. Each of them have three matalorganic "Primary" sources (TMGa, TMln, TMAl), two metal organic "dopant" sources (Cp2Mg, DEZn), and four gas sources (NH3, N2, H2, SiH4). All the sources are temperature- and  pressure-controlled to ensure  constant vapor delivering  and all gas flows are controlled with metal-sealed   mass-flow and pressure  controllers.  The typical room  temperature electron concentration and mobility of our  undoped 3-micron GaN  epilyers are   about 5 x 10*16cm-3 and  650 cm2/Vs, respectively. The hole  concentration and  mobility of the Mg  doped p-type layer are  about 5 x 10*17 cm-3  and 12 cm2/Vs, respectively.  Currently, one  of the reactors is dedicated  to the growth of III-nitride photonic device structures (LEDs, lasers, detectors, and waveguides) and the other is devoted to the growth of the heterojunction filed effect transistor structures.

Below: Outside the MOCVD System room