|
| |
|
Wurtzite polytype:
|
GaN
|
AlN
|
InN
|
|
Bandgap energy (eV)
|
3.44 (300 K)
|
6.20 (300K)
|
1.89 (300K)
|
|
Lattice Constant
(Å)
|
a=3.189
c=5.185
|
a=3.112
c=4.982
|
a=3.548
c=5.760
|
Thermal expansion
(x10-6/K)
|
da/a=5.59
dc/c=3.17
|
da/a=4.2
dc/c=5.3
|
da/a=4.0
dc/c=3.0
|
|
Thermal conductivity
k(W/cm
K )
|
1.3
|
2.0
|
0.8!0.2
|
Index of refraction
|
n(1 eV)=2.33
n(3.38 eV)=2.67
|
n(3 eV)=2.15!0.05
|
n=2.9-3.05
|
|
Dielectric constants
|
`r=9
`¥=5.35
|
`r=8.5!0.2
`¥=4.68-4.84
|
`r=15,
estimated
`¥=8.4
|
|
me*
|
0.23
|
0.33
|
0.11
|
|
mn*
|
0.8
|
|
0.5
|
|
|
|
Zinc-blende structure:
|
GaN
|
AlN
|
InN
|
Bandgap energy (eV)
(300 K)
|
3.2-3.3
|
5.11 (theory)
|
2.2 (theory)
|
Lattice constant a
(Å )
|
4.52
|
4.38
|
4.98
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The most important parameters of GaN, AlN, and InN.
The hexagonal
wurtzite structure of GaN and surface planes. (b) Band gap and bowing parameters of hexagonal (a-phase) and
cubic (b-phase) InN,
GaN, AlN and their alloys versus lattice constant a0.
Calculated band
structure near the G point (k
= 0) and the direct fundamental gap of wurtzite GaN
(Recent Publications #16 of this web site).
|
