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Sixuan Jin
Lab Address
Department of Physics
116 Cardwell Hall
Kansas State University
Manhattan, KS 66506-2601
Phone
(785) 532-2846
Fax
(785) 532-5636
E-Mail
sixjin@phys.ksu.edu
Research and Teaching 1999 - Current Visiting Professor
in Physics
Department, Kansas State University.
Experience
GaN-based Micro-LED and Micro-display devices, UV/blue
light emmitting devices fabrication
and characterization.
1998 - 1999 Senior Research Engineer in National
Key Laboratory of Artificial Microstructural and
Mesoscopic Physics,
Peking University.
GaN-based blue light emitting devices research
and fabrication
1997-1998
Visiting Professor in Physics
Department, Kansas State
University.
Design and
Set up a MOCVD System
for nitride materials growth
1993-1997 Senior Engineer in the
National Key Laboratory of Artificial
Microstructural and
Mesoscopic Physics, Peking
University.
(1)
III-nitride material growth by MOCVD, the
electrical and optical properties of GaN, InGaN
(2) Ohmic and
Schottky contacts on n-type and
p-type GaN
(3)
Fabrication of GaN-based blue light emitting
diodes.
1978-1993 Assistant
Professor in Physics Department, Peking University.
(1) Teaching: Experiments of
Modern Physics; Experiments of Semiconductor Physics; Semiconductor
integrating circuits;
(2) Research: The behavior
of hydrogen in Si and GaAs; Electrical
properties of solidC60, C70
on crystalline silicon;
Effects
of electron irradiation on semiconductor devices; Deep level impurities
and defects in Si and GaAs; Switch
transistor (3DK4) and Microwave devices .
Education
1972-1976:
Physics Department, Peking University, Beijing, China.
Patent and Awards
1). US
Patent 6410940 entitled ˇ°Micro-size
and detector arrays for minidisplay, hyper- bright light emitting
diodes, lighting,
and UV detector and imaging
sensor applicationsˇ±.
Inventor:
H.X. Jing, Jingyu. Lin, S.X.Jin and Jing Li
2). US Patent,
pending. ˇ°Light
emitting diodes
for General lightingˇ±
Inventor: H. X. Jiang, J. Y. Lin, and S. X. Jin
3). China
Patent ZL 95101275.4
International
Category number: C30B 25/02
Entitledˇ°The equipment
and method of growth single-crystal film of the nitride by
Metal-Organic Vapor Epitaxyˇ±.
Inventor:
Zhang Guoyi, Tong, yuzheng, Dang xiaozhong, Jin Sixuan.
4). Third Award for Science
Progress by National Education Committee of People ˇ®s Republic
of China for the study of Hydrogen in Si,
GaAs, Non-crystal Silicon.
Certificate
Number: 95 - 284
Qin- Guo Gang and Jin sixuan (Seventh
winner ) etc.
Publications
1.
ˇ°Electroluminecent properties of erbium
¨Cdoped III-N light-emitting diodesˇ± J.M.Zavada, S.X.Jin,
N.Nepal,
J.Y.Lin,
H.X.Jiang. P.Chow and
B.hertog. Appl Phys
Lett (U.S) 84,Page 1061-1063. (2004)
2.
ˇ°III-nitride ultraviolet light-emitting
diodes with delta dopingˇ± K.h.Kim, J.Li, S.X.Jin,
J.Y.Lin, H.X.Jiang. Appl Phys Lett
(U.S) 83,Page 566-568. (2003)
3 ˇ°GaN-based
waveguide devices for long-wavelength optical communicationsˇ± R.Hui.S.Taherion.Y.Wan (KU)
J.Li,
S.X.Jin,
J.Y.Lin, H.X.Jiang.(KSU) Appl Phys Lett (U.S) 82,Page
1326-1328. (2003)
4. ˇ°Size
dependence of III-nitride microdisk
light-emitting diode characteristicsˇ± S.X.Jin,J.
Shakya, J.Y.Lin,
H.X.Jiang. Appl Phys
Lett,(U.S) 78, page 3532-3534( 2001)
5. ˇ°III- Nitride
Blue
Microdisplaysˇ± H.X.Jiang, S.X.Jin,
J.Li, J.Shakya, and J.Y.Lin Appl Phys
Lett 78
(U.S) page
1303-1305(2001)
6. ˇ°
InGaN/GaN quantum well interconnected micro-disk light
emitting diodesˇ± S.X.Jin, J.li, J.Y.Lin,and H.X.Jiang.
Appl
Phys Lett (U.S) 77, page 3236-3238
(2000)
7. ˇ°GaN micro-disk light
emitting diodesˇ± S.X
.Jin, J.li, J.Z.Li, J.Y.Lin and H.X.Jiang Appl Phys Lett,(U.S)
76, page
631-633(2000)
8. ˇ°Using Fourier transform infrared grazing incidence
reflectivity to study local vibrational modes in GaN " W. H. Sun, K,
M. Chen, Z. J. Yang, J. Li, Y. Z.
Tong, S.
X. Jin, G. Y. Zhang, Q. L. Zhang, and G. G. Qin J. Appl. Phys.
85, 6430
(1999)
9. ˇ° Growth
and doping characteristics of InGaN
film grown by MOCVDˇ± Y.Z.Tong, F.Li Z.j.Yang,S.XJin, X.M.Ding,
G.Y.Zhang, and Z.Z.Gan. Solid State
Comunications, 109,
173-176. (1998)
10.
ˇ°Relationship of
background carrier
concentration and defects in GaN
grown by metal organic vaporphase epitaxyˇ± G.
Y. Zhang, Y. Z. Tong, Z. J.
Yang , S.X.Jin , J. Li, and Z.
Z. Gan. Appl. Phys.Lett.(U.S) 71, 3376
(1997)
11. ˇ° Low
temperature photoluminescence properties of InGaN films grow on
(0112) AI2O3
and (0001) Al2O3
substrates
by
low pressure MOCVPEˇ± Tong Yuzhen, Zhang Gouyi,Jin Sixuan,Yang
Zhijian, Dang Xiaozhong, and Wang Shumin.
Solid State Communication 102,
page 405 - 408 (1997)
12. ˇ°Effects
of thermal convection on growth
rate of GaN by MOCVPEˇ± G.Y. Zhang, Y.Z. Tong, S.X.Jin, X.Z. Dang,
Z.J.Yang, and Z.Z.Gan. Solid State
Communications (U.K) 102, page331-
334 (1997)
13. ˇ°
Electrical properties of contact of solid
C60 and N-type GaAsˇ± Chen Kaimao, Zhang Yaxiong.Qin Guogang, Jin
Sixuan, Wu Ke, Li
Chuanyi,Gu Zhenna, Zhou Xihuang. Chin. J. Semiconds.
Vol 18, No.1
(1997)
14.
ˇ°Rectification properties and interface
state of herterojunctions between solid C60 and p-type GaAsˇ±
Chen Kaimao,
Chen Yin, Zhang yaxiong, Jin
sixuan, wuke, Li chuanyi.
Chinese Journal of Semiconductor
19 (9) 1997
15. ˇ°Electron
states at a solid C60/Si
(111) interfaceˇ± Y.X.Zhang,K.M.Chen, G.G.Qin,K.Wu,C.Y.Li S.X.Jin, Z.N.Gu, and
X.H.Zhou.
J.Phys,Condens.Matter 8
L691-L696(1996)
16.ˇ°Investigation
of photoluminesence excitation
spectra from GaN film grown by low pressure MOCVD" Duan Jiaqi,
Zhang Borui, Qing Guoqang, Zang Guoyi, Tong Yuzhen, Jin Sixuan,
Yang Zhijian , and Yao
Guangqing. Chinese Journal
of Semiconductor. Vol17, No
8.pp637-640.(1996)
17. ˇ°P-type
GaN Directly grown by LP-MOCVDˇ±
Zhang Guoyi, Yang Zhijian, Tong Yuzhen, Jin sixuan, Dang
Xiaozhong, and
Wang Shumin .Third Chinese Optelectronics workshop 12-18 August
(1996).
18. ˇ°Raman
scattering spectra of GaN grown by
MOCVDˇ± Tong Yuzhen, Zhang Guoyi, Xu Ziliang, Dang Xiaozhong,
Wang Jingjing, Jin Sixuan,
Wang Shuming, Liu Hongdu.J. Infrared Millim.
Waves.
(China)Vol.15, No1 (1996)
19."Rectification properties and interface states of heterojunctions
between solid C60 and
n-type GaAs ˇ± K. M. Chen,
Y. X. Zhang, G. G. Qin, S. X. Jin,
K. Wu, C. Y. Li, Z. N. Gu,
and X. H. Zhou Appl. Phys. Lett. 69, 3557 (1996)
20.ˇ°Deep leves and free-carrier compensation in nitrogen-lmplanted
GaAsˇ± Chen Kai-mao, Jin
Si-xuan,
Jia Yong-qiang, Qiu Su-juan, lu Yu-nan,He Mei-fen and Liu Hong-fei.
Acta Physica
Sinica.Vol 45 No.3 March (1996)
21."Controlling the Schottky
barrier
height of Ti/n-GaAs Schottky diode containing hydrogen
by biased annealingˇ±, S. X. Jin, M. H. Yuan, H. Z.
Song, G. G. Qin, et al., Science in
China (A), 37, (6), 730-737(1994).
22.ˇ°The capture cross section and the energy distribution of Si/SiO2
interface statesˇ±, K.
M. Chen, J. C., Mao, L. Q. Wu, S. X. Jin,
and H. F. Liu, J. Semiconds. (China), 15, (5),
295-303(1994).
23.ˇ°Heterojunctions of solid C60 and crystalline silicon: rectifying
properties and barrier
heightsˇ±, K. M. Chen, Y. Q. Jia, S. X. Jin,
et al., J. Phys.: Condensed Matter (U. K.), 7,
L201-L207, (1995).
24. ˇ° Heterojunctions
of solid C70 and crystalline silicon:
rectifying properties and barrier heightsˇ±,
K. M. Chen, K. Wu,
Y. Chen, Y. Q. Jia, S. X. Jin, et al., Appl. Phys. Lett (U.S) 67,
(12),
1683-1685(1995).
25.ˇ° Electrical properties
of the contact of solid C70
and P-type crystalline siliconˇ±Chen
Kaimao,Jia Yongqiang, Wu Ke, Jin Sixuan,
Li. Chuanyi, Zhou
Xihuang and Gu Zhennan. Chin.J.
Semiconds. Vol.16, No.10 (1995)
26.ˇ° Deep levels in nitrogen-implanted n-type GaAsˇ±, K. M. Chen, Y. Q.
Jia, Y. Chen, A. P.
Li, S. X. Jin,
H. F. Liu, J. Appl. Phys.(U.S) 78, (6), 4261-4263(1995).
27. ˇ° Study
on etching of GaN single
crystal filmˇ±, S. X. Jin, X.
M. Ding, X. M. Cui, Y.
Z. Tong, X. Z. Dong, Z. J. Yang, Y. Lin, G. Y. Zhang,
Acta Photonica.Sinica,(China) Vol 24,
No Z3,
40-44(1995).
28.ˇ°Characteristics of Nb/C60 /P-Si structureˇ±, K. M. Chen, S. X. Jin,
Y. Q. Jia, K.Wu,
C.Y.Li, Z.N.Gu.and X.H.Zhou.. Chin. J.
Semiconds.(China), 15, (10), 716-737(1994).
29.ˇ°High quality GaN growth on (0112) Sapphire substrate by low
pressure MOCVDˇ±, G. Y.
Zhang, Y. Z. Tong, X. Z. Dang, S. X. Jin,
F. G. Hong, W. X. Chen, S. M. Wang, H. D. Liu,
C-MRS and E-MRS Joint Symposium on Electronic and
Opt electric Materials, (1994), P14,
Beijing, China.
30.ˇ° Bias-temperature effect in a rectifying Nb/C60 /P-Si
structure evidence for mobile
negative charges in solid C60 filmˇ±, K. M.
Chen, Y. Q. Jia, S. X. Jin,
et al., J. Phys:
Condensed Matter (U. K.), 6, L367-372(1994).
31.ˇ°Controlling Au/N-Si Schottky arrier containing hydrogen by zero
bias annealing and
reverse bias annealingˇ± Yuan Min-hua, Qiao
Yong-ping, Song Hai-zhi, Jin Si-xuan
and Qin
Guo-gang. Acta Physica Sinica. Vol 43, No.6
(1994)
32.ˇ°r radiation defects in semi-insulating LEC
GaAs after shallow impurity implantationˇ±,
K.M. Chen, S. X. Jin, et al., Acta Physica Sinica
(China), Vol. 43, (8), 1344-1351(1994).
33.ˇ° Properties of minority carrier traps and the hole traps in
semi-insulating LEC GaAs
after Si and Be-coplantationˇ±, K. M. Chen, S. X. Jin,
and S. J. Qiu, Acta Physica Sinica
(China), Vol. 43, (8), 1352-1359(1994).
34. ˇ°Effects
of reverse-bias annealing and
zero-bias annealing on a hydrogen containing Au/(n-type GaAs) Schottky
barrierˇ±, M. H. Yuan,
H. Z. Song, S. X. Jin, H. P. Wang, Y. P.
Qiao, and G. G. Qin, Phys.
Rev. B.(U.S) 48, (24),
17986-17994
(1993).
35. ˇ°Controlling of Schottky barrier heights for Au/n-GaAs with
hydrogen after metal deposition by bias annealingˇ±, S. X.
Jin, H.
P. Wang, M. H. Yuan, H. Z. Song, G. G. Qin, et al, Appl. Phys.
Lett.(U.S) 62, (21), 2719-2721(1993).
36. ˇ°Interface states and deep center in Au-doped MOS structuresˇ±, K.
M. Chen, S.
X. Jin, L. Q. Wu, and H. F. Liu,
Acta Physica Sinica
(China), Vol. 42, (8), 1324-1331(1993).
37. ˇ°Controlling
effect of bias annealing on Ti/n-GaAs Schottky barrier
containing hydrogenˇ±, S. X. Jin, M. H. Yuan,
L. P.
Wang, H. Z. Song, and G. G. Qin, Science in China (A), Vol. 23, (6),
617-622(1993).
38.ˇ°Effects of hydrogen on the Schottky barrier of Ti/n-GaAs diodesˇ±, S. X. Jin,
L. P.
Wang, M. H. Yuan, J. J. Chen, Y. Q. Jia, and
G. G. Qin, J. Appl. Phys. (U.S) 71, (1),
536-538(1992).
39.ˇ°Effects of reverse bias annealing and zero bias annealing on
Ti/n-Ga As and Au/n-GaAs
Schottky barriers containing hydrogenˇ±, G.
G. Qin, M. H. Yuan, S. X. Jin,
et al.,
Materials Science Forum (Swaziland), Vol
83-87, 587-592(1992)
40. "Negative charge state of hydrogen species in n-type GaAs ˇ±
M.H.Yuan, L.P.Wang,
S.X.Jin,
and J.J, Chen and G.G.Qin, Appl. Phys. Lett. (U.S) 58, (9),
925-927(1991).
41. "A method of determining if two or more deep levels belong
the same centerˇ±, K. M.
Chen, S. X. Jin,
L. Q. Wu, X. Q. Tan, Acta Physica Sinica (China), Vol. 38, (9),
1391-1399
(1989), translated and reprinted in Chinese.
Physics. (U. S. A.) Vol. 10, (3) July-Sept
(1990).
42.ˇ°The stability of electron irradiation transistorˇ±, Z. A. Wang, S. X. Jin,
Semiconductor of technique (China) (6)
30-34(1988).
43.ˇ°A method for measuring carrier capture cross section of deep
centers with eliminating
the influence of in homogeneous carrier
distributionˇ±, K. M. Chen, G. G. Qin, Z. A. Wang,
S. X. Jin,
Acta Physica Sinica (China), 33, (4), 486-495 (1984).
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